An algorithm for calculating the defect structure of semiconductor silicon crystals was proposed. The proposed approach makes it possible to calculate the sizes, distribution densities of grown-in microdefects at any point of the crystal. Calculations are performed by using and analyzing the thermal conditions of crystal growth in the temperature range from 1683 K to 300 K. The algorithm flowchart is given.
| Published in | Engineering and Applied Sciences (Volume 2, Issue 5) |
| DOI | 10.11648/j.eas.20170205.11 |
| Page(s) | 77-88 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
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Copyright © The Author(s), 2017. Published by Science Publishing Group |
Semiconductor Silicon, Precipitates, Molecular Potential, Grown-in Microdefects, Microvoids, Dislocation Loops, Algorithm
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APA Style
Vitalyi Igorevich Talanin, Igor Evgenievich Talanin, Vladislav Igorevich Lashko. (2017). Algorithm for Calculating the Initial Defect Structure of Semiconductor Silicon. Engineering and Applied Sciences, 2(5), 77-88. https://doi.org/10.11648/j.eas.20170205.11
ACS Style
Vitalyi Igorevich Talanin; Igor Evgenievich Talanin; Vladislav Igorevich Lashko. Algorithm for Calculating the Initial Defect Structure of Semiconductor Silicon. Eng. Appl. Sci. 2017, 2(5), 77-88. doi: 10.11648/j.eas.20170205.11
AMA Style
Vitalyi Igorevich Talanin, Igor Evgenievich Talanin, Vladislav Igorevich Lashko. Algorithm for Calculating the Initial Defect Structure of Semiconductor Silicon. Eng Appl Sci. 2017;2(5):77-88. doi: 10.11648/j.eas.20170205.11
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Download@article{10.11648/j.eas.20170205.11,
author = {Vitalyi Igorevich Talanin and Igor Evgenievich Talanin and Vladislav Igorevich Lashko},
title = {Algorithm for Calculating the Initial Defect Structure of Semiconductor Silicon},
journal = {Engineering and Applied Sciences},
volume = {2},
number = {5},
pages = {77-88},
doi = {10.11648/j.eas.20170205.11},
url = {https://doi.org/10.11648/j.eas.20170205.11},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.eas.20170205.11},
abstract = {An algorithm for calculating the defect structure of semiconductor silicon crystals was proposed. The proposed approach makes it possible to calculate the sizes, distribution densities of grown-in microdefects at any point of the crystal. Calculations are performed by using and analyzing the thermal conditions of crystal growth in the temperature range from 1683 K to 300 K. The algorithm flowchart is given.},
year = {2017}
}
TY - JOUR T1 - Algorithm for Calculating the Initial Defect Structure of Semiconductor Silicon AU - Vitalyi Igorevich Talanin AU - Igor Evgenievich Talanin AU - Vladislav Igorevich Lashko Y1 - 2017/11/28 PY - 2017 N1 - https://doi.org/10.11648/j.eas.20170205.11 DO - 10.11648/j.eas.20170205.11 T2 - Engineering and Applied Sciences JF - Engineering and Applied Sciences JO - Engineering and Applied Sciences SP - 77 EP - 88 PB - Science Publishing Group SN - 2575-1468 UR - https://doi.org/10.11648/j.eas.20170205.11 AB - An algorithm for calculating the defect structure of semiconductor silicon crystals was proposed. The proposed approach makes it possible to calculate the sizes, distribution densities of grown-in microdefects at any point of the crystal. Calculations are performed by using and analyzing the thermal conditions of crystal growth in the temperature range from 1683 K to 300 K. The algorithm flowchart is given. VL - 2 IS - 5 ER -
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