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Electrical and Optical Characteristics of Copper Antimony Sulphide Thin Films Fabricated in Chemical Baths of Different Growth Media

Received: 14 April 2020     Accepted: 7 May 2020     Published: 28 May 2020
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Abstract

Chemical Bath Deposition Technique has been used to fabricate thin films of copper antimony sulphide in two different growth media: water and polyvinyl alcohol and the effects of these media on the electrical and optical properties of the CuSbS2 thin films studied. The technique required a liquid precursor; usually a solution of organic metallic powder dissolved in an organic solvent and kept in a reaction bath where reaction takes place. The precursor reaction chemicals used were copper chloride, antimony chloride and sodium thiosulphate and precipitations were on pre-cleaned borosilicate glass substrate at room temperature and pH of 9.1. Both deposits were subsequently similarly annealed for an hour each at a temperature of 250°C before testing the optical characteristics of both films using a UV-VIS-NIR 200 – 1100 nm range spectrophotometer and electrical characteristics, using a Quadpro four point probe. A proton induced Rutherford backscattering done on films detected thicknesses of films to be 545 nm and 514 nm for water and PVA bath deposits respectively. The thin film resistivities recorded were also 770 Ωm and 699 Ωm respectively. Absorbance, refractive indices, and other major optical parameters of the thin films varied differently with growth media in the infra red but remained fairly same in the visible and other higher frequency ranges.

Published in American Journal of Nanosciences (Volume 6, Issue 1)
DOI 10.11648/j.ajn.20200601.11
Page(s) 1-5
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2020. Published by Science Publishing Group

Keywords

Chemical Baths, Thin Film, PVA Baths, Spectrophotometer

References
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[14] A. I. Onyia, “Study of the Differences in Solid State Properties of Copper Antimony Sulphide Thin Films Grown in Two Different Media,” IJSAR Journal of Engineering and Computing (IJSAR-JEC), vol. 5, pp. 43-51, March/June 2019.
[15] J. C. Osuwa and R. U. Osuji (2011). “Analysis of Electrical and Microstructural Properties of Annealed Antimony Sulphide (Sb2S3) Thin Films,” Chalcogenide Letters, vol. 8, no. 9, pp. 571-57, 2011.
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    Augustine Ike Onyia, Mishark Nnamdi Nnabuchi, Abraham Iheanyichukwu Chima. (2020). Electrical and Optical Characteristics of Copper Antimony Sulphide Thin Films Fabricated in Chemical Baths of Different Growth Media. American Journal of Nanosciences, 6(1), 1-5. https://doi.org/10.11648/j.ajn.20200601.11

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    ACS Style

    Augustine Ike Onyia; Mishark Nnamdi Nnabuchi; Abraham Iheanyichukwu Chima. Electrical and Optical Characteristics of Copper Antimony Sulphide Thin Films Fabricated in Chemical Baths of Different Growth Media. Am. J. Nanosci. 2020, 6(1), 1-5. doi: 10.11648/j.ajn.20200601.11

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    AMA Style

    Augustine Ike Onyia, Mishark Nnamdi Nnabuchi, Abraham Iheanyichukwu Chima. Electrical and Optical Characteristics of Copper Antimony Sulphide Thin Films Fabricated in Chemical Baths of Different Growth Media. Am J Nanosci. 2020;6(1):1-5. doi: 10.11648/j.ajn.20200601.11

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  • @article{10.11648/j.ajn.20200601.11,
      author = {Augustine Ike Onyia and Mishark Nnamdi Nnabuchi and Abraham Iheanyichukwu Chima},
      title = {Electrical and Optical Characteristics of Copper Antimony Sulphide Thin Films Fabricated in Chemical Baths of Different Growth Media},
      journal = {American Journal of Nanosciences},
      volume = {6},
      number = {1},
      pages = {1-5},
      doi = {10.11648/j.ajn.20200601.11},
      url = {https://doi.org/10.11648/j.ajn.20200601.11},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajn.20200601.11},
      abstract = {Chemical Bath Deposition Technique has been used to fabricate thin films of copper antimony sulphide in two different growth media: water and polyvinyl alcohol and the effects of these media on the electrical and optical properties of the CuSbS2 thin films studied. The technique required a liquid precursor; usually a solution of organic metallic powder dissolved in an organic solvent and kept in a reaction bath where reaction takes place. The precursor reaction chemicals used were copper chloride, antimony chloride and sodium thiosulphate and precipitations were on pre-cleaned borosilicate glass substrate at room temperature and pH of 9.1. Both deposits were subsequently similarly annealed for an hour each at a temperature of 250°C before testing the optical characteristics of both films using a UV-VIS-NIR 200 – 1100 nm range spectrophotometer and electrical characteristics, using a Quadpro four point probe. A proton induced Rutherford backscattering done on films detected thicknesses of films to be 545 nm and 514 nm for water and PVA bath deposits respectively. The thin film resistivities recorded were also 770 Ωm and 699 Ωm respectively. Absorbance, refractive indices, and other major optical parameters of the thin films varied differently with growth media in the infra red but remained fairly same in the visible and other higher frequency ranges.},
     year = {2020}
    }
    

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  • TY  - JOUR
    T1  - Electrical and Optical Characteristics of Copper Antimony Sulphide Thin Films Fabricated in Chemical Baths of Different Growth Media
    AU  - Augustine Ike Onyia
    AU  - Mishark Nnamdi Nnabuchi
    AU  - Abraham Iheanyichukwu Chima
    Y1  - 2020/05/28
    PY  - 2020
    N1  - https://doi.org/10.11648/j.ajn.20200601.11
    DO  - 10.11648/j.ajn.20200601.11
    T2  - American Journal of Nanosciences
    JF  - American Journal of Nanosciences
    JO  - American Journal of Nanosciences
    SP  - 1
    EP  - 5
    PB  - Science Publishing Group
    SN  - 2575-4858
    UR  - https://doi.org/10.11648/j.ajn.20200601.11
    AB  - Chemical Bath Deposition Technique has been used to fabricate thin films of copper antimony sulphide in two different growth media: water and polyvinyl alcohol and the effects of these media on the electrical and optical properties of the CuSbS2 thin films studied. The technique required a liquid precursor; usually a solution of organic metallic powder dissolved in an organic solvent and kept in a reaction bath where reaction takes place. The precursor reaction chemicals used were copper chloride, antimony chloride and sodium thiosulphate and precipitations were on pre-cleaned borosilicate glass substrate at room temperature and pH of 9.1. Both deposits were subsequently similarly annealed for an hour each at a temperature of 250°C before testing the optical characteristics of both films using a UV-VIS-NIR 200 – 1100 nm range spectrophotometer and electrical characteristics, using a Quadpro four point probe. A proton induced Rutherford backscattering done on films detected thicknesses of films to be 545 nm and 514 nm for water and PVA bath deposits respectively. The thin film resistivities recorded were also 770 Ωm and 699 Ωm respectively. Absorbance, refractive indices, and other major optical parameters of the thin films varied differently with growth media in the infra red but remained fairly same in the visible and other higher frequency ranges.
    VL  - 6
    IS  - 1
    ER  - 

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Author Information
  • Department of Industrial Physics, Enugu State University of Science and Technology, Enugu, Nigeria

  • Department of Industrial Physics, Enugu State University of Science and Technology, Enugu, Nigeria

  • Department of Industrial Physics, Enugu State University of Science and Technology, Enugu, Nigeria

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